A platform for research: civil engineering, architecture and urbanism
Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals
Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals
Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals
Ammon, W. V. (author) / Dreier, P. (author) / Hensel, W. (author) / Lambert, U. (author) / Koester, L. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 36 ; 33-41
1996-01-01
9 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
The nitrogen-pair oxygen defect in silicon
British Library Online Contents | 1996
|Electrical properties of nitrogen-enriched silicon single crystals
British Library Online Contents | 2015
|British Library Online Contents | 1995
|Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping
British Library Online Contents | 2007
|