Routine measurement of the absolute As~4 flux in a molecular beam epitaxy system with conventional RHEED equipment

Heyn, C. / Harsdorff, M. | British Library Online Contents | 1996

On the Mechanism of RHEED Oscillations in Molecular Beam Epitaxy of II-VI Compounds

Griesche, J. / Hoffmann, N. / Rabe, M. et al. | British Library Online Contents | 1995

Influence of physisorbed arsenic on RHEED intensity oscillations during low-temperature GaAs molecular beam epitaxy

Venkatasubramanian, R. / Pamula, V. K. / Dorsey, D. L. | British Library Online Contents | 1996

Observation of Cubic GaN/AlN Heterointerface Formation by RHEED in Plasma-Assisted Molecular Beam Epitaxy

Okumura, H. / Koizumi, T. / Ishida, Y. et al. | British Library Online Contents | 2000

RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy

Shen, X. Q. / Ide, T. / Shimizu, M. et al. | British Library Online Contents | 2002