Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Influence of physisorbed arsenic on RHEED intensity oscillations during low-temperature GaAs molecular beam epitaxy

    New search for: Venkatasubramanian, R.
    New search for: Pamula, V. K.
    New search for: Dorsey, D. L.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Influence of physisorbed arsenic on RHEED intensity oscillations during low-temperature GaAs molecular beam epitaxy

    New search for: Venkatasubramanian, R.
    New search for: Pamula, V. K.
    New search for: Dorsey, D. L.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Influence of physisorbed arsenic on RHEED intensity oscillations during low-temperature GaAs molecular beam epitaxy

    New search for: Venkatasubramanian, R.
    New search for: Pamula, V. K.
    New search for: Dorsey, D. L.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Influence of physisorbed arsenic on RHEED intensity oscillations during low-temperature GaAs molecular beam epitaxy

    Contributors:

    Venkatasubramanian, R. (author) / Pamula, V. K. (author) / Dorsey, D. L. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 104/105 ; 448-454

    Publication date:

    1996-01-01

    Size:

    7 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    On the Mechanism of RHEED Oscillations in Molecular Beam Epitaxy of II-VI Compounds

    Griesche, J. / Hoffmann, N. / Rabe, M. et al. | British Library Online Contents | 1995

    RHEED intensity oscillation of C60 growth on GaAs substrates

    Nishinaga, J. / Kawaharazuka, A. / Horikoshi, Y. | British Library Online Contents | 2008

    Observation of Cubic GaN/AlN Heterointerface Formation by RHEED in Plasma-Assisted Molecular Beam Epitaxy

    Okumura, H. / Koizumi, T. / Ishida, Y. et al. | British Library Online Contents | 2000

    RHEED reflex profile analysis and phase locked epitaxy of ZnSe on (001)-oriented GaAs

    Griesche, J. / Hoffmann, N. / Rabe, M. et al. | British Library Online Contents | 1994

    Advanced study of various characteristics found in RHEED patterns during the growth of InAs quantum dots on GaAs (0 0 1) substrate by molecular beam epitaxy

    Lee, J. W. / Schuh, D. / Bichler, M. et al. | British Library Online Contents | 2004

    Back to top