Formation mechanism of a new emission band in Si-ion-implanted GaAs after rapid thermal annealing: Fid-Bau Portal

Formation mechanism of a new emission band in Si-ion-implanted GaAs after rapid thermal annealing

Kim, D. Y. / Oh, Y. T. / Kang, T. W. / Kim, T. W.

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Formation mechanism of a new emission band in Si-ion-implanted GaAs after rapid thermal annealing

Kim, D. Y. / Oh, Y. T. / Kang, T. W. / Kim, T. W.

Formation mechanism of a new emission band in Si-ion-implanted GaAs after rapid thermal annealing

Kim, D. Y. / Oh, Y. T. / Kang, T. W. / Kim, T. W.

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Order at Subito €

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Document information

Title:

Formation mechanism of a new emission band in Si-ion-implanted GaAs after rapid thermal annealing

Contributors:

Kim, D. Y. (author) / Oh, Y. T. (author) / Kang, T. W. (author) / Kim, T. W. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE LETTERS ; 15 ; 1545-1547

Publication date:

1996-01-01

Size:

3 pages

ISSN:

0261-8028

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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