XPD study of atomic intermixing at the Ge/Si(001) interface: Fid-Bau Portal

XPD study of atomic intermixing at the Ge/Si(001) interface

Davoli, I. / Gunnella, R. / Castrucci, P. / Pinto, N. / Bernardini, R. / De Crescenzi, M.

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XPD study of atomic intermixing at the Ge/Si(001) interface

Davoli, I. / Gunnella, R. / Castrucci, P. / Pinto, N. / Bernardini, R. / De Crescenzi, M.

XPD study of atomic intermixing at the Ge/Si(001) interface

Davoli, I. / Gunnella, R. / Castrucci, P. / Pinto, N. / Bernardini, R. / De Crescenzi, M.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

XPD study of atomic intermixing at the Ge/Si(001) interface

Contributors:

Davoli, I. (author) / Gunnella, R. (author) / Castrucci, P. (author) / Pinto, N. (author) / Bernardini, R. (author) / De Crescenzi, M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 102 ; 102-106

Publication date:

1996-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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