Effect of oxygen on the growth of epitaxial ErSi~2~-~x films on Si by the reactive deposition technique: Fid-Bau Portal

Effect of oxygen on the growth of epitaxial ErSi~2~-~x films on Si by the reactive deposition technique

Grimaldi, M. G. / Ravesi, S. / Spinella, C. / Xinshui, Y.

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Effect of oxygen on the growth of epitaxial ErSi~2~-~x films on Si by the reactive deposition technique

Grimaldi, M. G. / Ravesi, S. / Spinella, C. / Xinshui, Y.

Effect of oxygen on the growth of epitaxial ErSi~2~-~x films on Si by the reactive deposition technique

Grimaldi, M. G. / Ravesi, S. / Spinella, C. / Xinshui, Y.

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Check availability in my library

Order at Subito €

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Document information

Title:

Effect of oxygen on the growth of epitaxial ErSi~2~-~x films on Si by the reactive deposition technique

Contributors:

Grimaldi, M. G. (author) / Ravesi, S. (author) / Spinella, C. (author) / Xinshui, Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 102 ; 138-141

Publication date:

1996-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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