Investigation of the space charge regime of epitaxially grown GaAs (100) by high-resolution electron energy-loss spectroscopy: Fid-Bau Portal

Investigation of the space charge regime of epitaxially grown GaAs (100) by high-resolution electron energy-loss spectroscopy

Polyakov, V. M. / Elbe, A. / Wu, J. / Lapeyre, G. J. / Schaefer, J. A.

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Investigation of the space charge regime of epitaxially grown GaAs (100) by high-resolution electron energy-loss spectroscopy

Polyakov, V. M. / Elbe, A. / Wu, J. / Lapeyre, G. J. / Schaefer, J. A.

Investigation of the space charge regime of epitaxially grown GaAs (100) by high-resolution electron energy-loss spectroscopy

Polyakov, V. M. / Elbe, A. / Wu, J. / Lapeyre, G. J. / Schaefer, J. A.

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Document information

Title:

Investigation of the space charge regime of epitaxially grown GaAs (100) by high-resolution electron energy-loss spectroscopy

Contributors:

Polyakov, V. M. (author) / Elbe, A. (author) / Wu, J. (author) / Lapeyre, G. J. (author) / Schaefer, J. A. (author)

Published in:

APPLIED SURFACE SCIENCE ; 104/105 ; 24-34

Publication date:

1996-01-01

Size:

11 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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