Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy: Fid-Bau Portal

Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy

Yang, H. / Brandt, O. / Trampert, A. / Ploog, K. H.

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Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy

Yang, H. / Brandt, O. / Trampert, A. / Ploog, K. H.

Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy

Yang, H. / Brandt, O. / Trampert, A. / Ploog, K. H.

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Document information

Title:

Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy

Contributors:

Yang, H. (author) / Brandt, O. (author) / Trampert, A. (author) / Ploog, K. H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 104/105 ; 461-467

Publication date:

1996-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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