Effects of ZnSe and P insertion layers on band offsets at (100) GaAs/AlAs interfaces: Fid-Bau Portal

Effects of ZnSe and P insertion layers on band offsets at (100) GaAs/AlAs interfaces

Saito, T. / Ikoma, T.

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Effects of ZnSe and P insertion layers on band offsets at (100) GaAs/AlAs interfaces

Saito, T. / Ikoma, T.

Effects of ZnSe and P insertion layers on band offsets at (100) GaAs/AlAs interfaces

Saito, T. / Ikoma, T.

Access

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Effects of ZnSe and P insertion layers on band offsets at (100) GaAs/AlAs interfaces

Contributors:

Saito, T. (author) / Ikoma, T. (author)

Published in:

APPLIED SURFACE SCIENCE ; 107 ; 222-226

Publication date:

1996-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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Optical and structural properties of ZnSe/GaAs interfaces

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