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Comparison of Interfacial Charge Densities, Valence Band Offsets, and Formation Enthalpies of (GaAs)n(AlAs)n(001), (110), and (111)
Abstract We became intrigued with the thermodynamic stability of GaAs-AℓAs su perlattices when Kuanf[1] reported that long range (GaAs)1(AℓAs)1(100)(110) ordering occurred during continuous codeposition of Aℓ,Ga and As without any imposition of special growth sequences. (Note that the (001) and (110) monolayer superlattices are identical, differing only by a 90° rotation). He suggested that this superlattice might be the thermodynamically stable state, but since the ordering occurred much more strongly and over a wider range of deposition parameters with a (110) rather than a (001) substrate, we thought this ordering was more likely a result of growth kinetics. In this talk we will present formation enthalpies of (GaAs)n(AℓAs)n(001),(110) and (111) with n = 1 and 3 calculated with the scalar relativistic norm conserving pseudopotential method.
Comparison of Interfacial Charge Densities, Valence Band Offsets, and Formation Enthalpies of (GaAs)n(AlAs)n(001), (110), and (111)
Abstract We became intrigued with the thermodynamic stability of GaAs-AℓAs su perlattices when Kuanf[1] reported that long range (GaAs)1(AℓAs)1(100)(110) ordering occurred during continuous codeposition of Aℓ,Ga and As without any imposition of special growth sequences. (Note that the (001) and (110) monolayer superlattices are identical, differing only by a 90° rotation). He suggested that this superlattice might be the thermodynamically stable state, but since the ordering occurred much more strongly and over a wider range of deposition parameters with a (110) rather than a (001) substrate, we thought this ordering was more likely a result of growth kinetics. In this talk we will present formation enthalpies of (GaAs)n(AℓAs)n(001),(110) and (111) with n = 1 and 3 calculated with the scalar relativistic norm conserving pseudopotential method.
Comparison of Interfacial Charge Densities, Valence Band Offsets, and Formation Enthalpies of (GaAs)n(AlAs)n(001), (110), and (111)
Bylander, D. M. (author) / Kleinman, L. (author)
1988-01-01
8 pages
Article/Chapter (Book)
Electronic Resource
English
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