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    Conventional EBIC versus MOS/EBIC study of electrically active defects in Si and SOI

    New search for: Bondarenko, I.
    New search for: Kirk, H.
    New search for: Kononchuk, O.
    New search for: Rozgonyi, G.
    New search for: Balkanski, M.
    New search for: Kamimura, H.
    New search for: Mahajan, S.

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    Conventional EBIC versus MOS/EBIC study of electrically active defects in Si and SOI

    New search for: Bondarenko, I.
    New search for: Kirk, H.
    New search for: Kononchuk, O.
    New search for: Rozgonyi, G.
    New search for: Balkanski, M.
    New search for: Kamimura, H.
    New search for: Mahajan, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Conventional EBIC versus MOS/EBIC study of electrically active defects in Si and SOI

    New search for: Bondarenko, I.
    New search for: Kirk, H.
    New search for: Kononchuk, O.
    New search for: Rozgonyi, G.
    New search for: Balkanski, M.
    New search for: Kamimura, H.
    New search for: Mahajan, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Conventional EBIC versus MOS/EBIC study of electrically active defects in Si and SOI

    Contributors:

    Bondarenko, I. (author) / Kirk, H. (author) / Kononchuk, O. (author) / Rozgonyi, G. (author) / Balkanski, M. / Kamimura, H. / Mahajan, S.

    Published in:

    Solid-State Materials for Advanced Technology ; 32-37

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 42

    Publication date:

    1996-01-01

    Size:

    6 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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