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Temperature dependent EBIC and deep level transient spectroscopy investigation of different types of misfit-dislocations at MOVPE grown GaAs/InGaAs/GaAs-single-quantum wells
Temperature dependent EBIC and deep level transient spectroscopy investigation of different types of misfit-dislocations at MOVPE grown GaAs/InGaAs/GaAs-single-quantum wells
Temperature dependent EBIC and deep level transient spectroscopy investigation of different types of misfit-dislocations at MOVPE grown GaAs/InGaAs/GaAs-single-quantum wells
Panepinto, L. (author) / Zeimer, U. (author) / Seifert, W. (author) / Seibt, M. (author) / Bugge, F. (author) / Weyers, M. (author) / Schroeter, W. (author) / Balkanski, M. / Kamimura, H. / Mahajan, S.
1996-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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