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    High-resolution transmission electron microscopy investigation of a stacking fault in -Si~3N~4

    New search for: Ning, X. G.
    New search for: Wilkinson, D. S.
    New search for: Weatherly, G. C.
    New search for: Ye, H. O.

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    High-resolution transmission electron microscopy investigation of a stacking fault in -Si~3N~4

    New search for: Ning, X. G.
    New search for: Wilkinson, D. S.
    New search for: Weatherly, G. C.
    New search for: Ye, H. O.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    High-resolution transmission electron microscopy investigation of a stacking fault in -Si~3N~4

    New search for: Ning, X. G.
    New search for: Wilkinson, D. S.
    New search for: Weatherly, G. C.
    New search for: Ye, H. O.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    High-resolution transmission electron microscopy investigation of a stacking fault in -Si~3N~4

    Contributors:

    Ning, X. G. (author) / Wilkinson, D. S. (author) / Weatherly, G. C. (author) / Ye, H. O. (author)

    Published in:

    JOURNAL OF MATERIALS SCIENCE ; 32 ; 1435-1436

    Publication date:

    1997-01-01

    Size:

    2 pages

    ISSN:

    0022-2461

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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