Raman study of defects in SI-GaAs and Se-doped epitaxial layer irradiated by 10 MeV electrons: Fid-Bau Portal

Raman study of defects in SI-GaAs and Se-doped epitaxial layer irradiated by 10 MeV electrons

Wu, F. / Li, H. / Chen, W. / Cheng, G. / Hang, D.

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Raman study of defects in SI-GaAs and Se-doped epitaxial layer irradiated by 10 MeV electrons

Wu, F. / Li, H. / Chen, W. / Cheng, G. / Hang, D.

Raman study of defects in SI-GaAs and Se-doped epitaxial layer irradiated by 10 MeV electrons

Wu, F. / Li, H. / Chen, W. / Cheng, G. / Hang, D.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Raman study of defects in SI-GaAs and Se-doped epitaxial layer irradiated by 10 MeV electrons

Contributors:

Wu, F. (author) / Li, H. (author) / Chen, W. (author) / Cheng, G. (author) / Hang, D. (author)

Published in:

RARE METALS -BEIJING- ENGLISH EDITION ; 15 ; 12-15

Publication date:

1996-01-01

Size:

4 pages

ISSN:

1001-0521

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 669

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