Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons: Fid-Bau Portal

Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons

Takakura, K. / Furukawa, H. / Kuroki, S. / Hayama, K. / Kudou, T. / Shigaki, K. / Ohyama, H. / Simoen, E. / Eneman, G. / Claeys, C.

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Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons

Takakura, K. / Furukawa, H. / Kuroki, S. / Hayama, K. / Kudou, T. / Shigaki, K. / Ohyama, H. / Simoen, E. / Eneman, G. / Claeys, C.

Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons

Takakura, K. / Furukawa, H. / Kuroki, S. / Hayama, K. / Kudou, T. / Shigaki, K. / Ohyama, H. / Simoen, E. / Eneman, G. / Claeys, C.

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Title:

Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons

Contributors:

Takakura, K. (author) / Furukawa, H. (author) / Kuroki, S. (author) / Hayama, K. (author) / Kudou, T. (author) / Shigaki, K. (author) / Ohyama, H. (author) / Simoen, E. (author) / Eneman, G. (author) / Claeys, C. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 292-295

Publication date:

2006-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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