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    Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model

    New search for: Marcon, J.
    New search for: Koumetz, S.
    New search for: Ketata, K.
    New search for: Ketata, M.
    New search for: Launay, P.
    New search for: Jantz, W.
    New search for: Baeumler, M.

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    Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model

    New search for: Marcon, J.
    New search for: Koumetz, S.
    New search for: Ketata, K.
    New search for: Ketata, M.
    New search for: Launay, P.
    New search for: Jantz, W.
    New search for: Baeumler, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model

    New search for: Marcon, J.
    New search for: Koumetz, S.
    New search for: Ketata, K.
    New search for: Ketata, M.
    New search for: Launay, P.
    New search for: Jantz, W.
    New search for: Baeumler, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model

    Contributors:

    Marcon, J. (author) / Koumetz, S. (author) / Ketata, K. (author) / Ketata, M. (author) / Launay, P. (author) / Jantz, W. / Baeumler, M.

    Published in:

    Solid-State Materials for Advanced Technology ; 78-81

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 44

    Publication date:

    1997-01-01

    Size:

    4 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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