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Strain effect on interatomic distances in InGaAs/InP epitaxial layers

Tormen, M. / De Salvador, D. / Boscherini, F. / Romanato, F. / Drigo, A. V. / Mobilio, S.

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Strain effect on interatomic distances in InGaAs/InP epitaxial layers

Tormen, M. / De Salvador, D. / Boscherini, F. / Romanato, F. / Drigo, A. V. / Mobilio, S.

Strain effect on interatomic distances in InGaAs/InP epitaxial layers

Tormen, M. / De Salvador, D. / Boscherini, F. / Romanato, F. / Drigo, A. V. / Mobilio, S.

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Check availability in my library

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Document information

Title:

Strain effect on interatomic distances in InGaAs/InP epitaxial layers

Contributors:

Tormen, M. (author) / De Salvador, D. (author) / Boscherini, F. (author) / Romanato, F. (author) / Drigo, A. V. (author) / Mobilio, S. (author)

Published in:

APPLIED SURFACE SCIENCE ; 188 ; 85-89

Publication date:

2002-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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