Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy

Koizumi, A. / Fujiwara, Y. / Inoue, K. et al. | British Library Online Contents | 2003

Assessment of layer structures for GaInP/GaAs-heterojunction bipolar transistors

Richter, E. / Brunner, F. / Gramlich, S. et al. | British Library Online Contents | 1999

Optically Induced Annneal Of GaAs and AlGaAs Layers

Abramov, A. V. / Deryagin, N. G. / Deryagin, A. G. et al. | British Library Online Contents | 1995

First step of degradation mechanisms in AlGaAs/GaAs laser-like structures

Sieber, B. / Farvacque, J. L. / Wang, J. et al. | British Library Online Contents | 1993

XPS study of GaInP on GaAs interface

Dehaese, O. / Wallart, X. / Schuler, O. et al. | British Library Online Contents | 1998