Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy: Fid-Bau Portal

Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy

Koizumi, A. / Fujiwara, Y. / Inoue, K. / Yoshikane, T. / Urakami, A. / Takeda, Y.

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Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy

Koizumi, A. / Fujiwara, Y. / Inoue, K. / Yoshikane, T. / Urakami, A. / Takeda, Y.

Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy

Koizumi, A. / Fujiwara, Y. / Inoue, K. / Yoshikane, T. / Urakami, A. / Takeda, Y.

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Title:

Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy

Contributors:

Koizumi, A. (author) / Fujiwara, Y. (author) / Inoue, K. (author) / Yoshikane, T. (author) / Urakami, A. (author) / Takeda, Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 216 ; 560-563

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

Yoshikane, T. / Urakami, A. / Koizumi, A. et al. | British Library Online Contents | 2004

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Room temperature 1.5mm electroluminescnence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase epitaxy

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XPS study of GaInP on GaAs interface

Dehaese, O. / Wallart, X. / Schuler, O. et al. | British Library Online Contents | 1998