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Investigation of growth conditions for epitaxial growth of SiC on Si in the solid-source molecular beam epitaxy
Investigation of growth conditions for epitaxial growth of SiC on Si in the solid-source molecular beam epitaxy
Investigation of growth conditions for epitaxial growth of SiC on Si in the solid-source molecular beam epitaxy
Pfennighaus, K. (author) / Fissel, A. (author) / Kaiser, U. (author) / Wendt, M. (author) / Kraeusslich, J. (author) / Peiter, G. (author) / Schroeter, B. (author) / Richter, W. (author) / Camassel, J. / Fricke, K.
1997-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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