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Investigation of growth conditions for epitaxial growth of SiC on Si in the solid-source molecular beam epitaxy
Investigation of growth conditions for epitaxial growth of SiC on Si in the solid-source molecular beam epitaxy
Investigation of growth conditions for epitaxial growth of SiC on Si in the solid-source molecular beam epitaxy
Pfennighaus, K. (Autor:in) / Fissel, A. (Autor:in) / Kaiser, U. (Autor:in) / Wendt, M. (Autor:in) / Kraeusslich, J. (Autor:in) / Peiter, G. (Autor:in) / Schroeter, B. (Autor:in) / Richter, W. (Autor:in) / Camassel, J. / Fricke, K.
01.01.1997
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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