Growth kinetics of ultra-thin N~2O oxynitrides for gate insulator: Fid-Bau Portal

Growth kinetics of ultra-thin N~2O oxynitrides for gate insulator

Matsumura, M. / Nishioka, Y.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Growth kinetics of ultra-thin N~2O oxynitrides for gate insulator

Matsumura, M. / Nishioka, Y.

Growth kinetics of ultra-thin N~2O oxynitrides for gate insulator

Matsumura, M. / Nishioka, Y.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

Growth kinetics of ultra-thin N~2O oxynitrides for gate insulator

Contributors:

Matsumura, M. (author) / Nishioka, Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 117/118 ; 136-140

Publication date:

1997-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

Bersani, M. / Giubertoni, D. / Barozzi, M. et al. | British Library Online Contents | 2003

Ordered Mesoporous Silicon Oxynitrides

El Haskouri, J. / Cabrera, S. / Sapina, F. et al. | British Library Online Contents | 2001

Ultra-thin parylene used as a gate insulator in nanoscale devices

Donaldson, Laurie | British Library Online Contents | 2018

Formation of barium-tantalum oxynitrides

Hellwig, A. / Hendry, A. | British Library Online Contents | 1994

Oxynitrides on 4H-SiC(0001)

Hoffmann, P. / Goryachko, A. / Schmeier, D. | British Library Online Contents | 2005