Atom configuration study of �-doped Er in InP by fluorescence EXAFS: Fid-Bau Portal

Atom configuration study of -doped Er in InP by fluorescence EXAFS

Ofuchi, H. / Tsuchiya, J. / Matsubara, N. / Tabuchi, M. / Fujiwara, Y. / Takeda, Y.

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Atom configuration study of -doped Er in InP by fluorescence EXAFS

Ofuchi, H. / Tsuchiya, J. / Matsubara, N. / Tabuchi, M. / Fujiwara, Y. / Takeda, Y.

Atom configuration study of -doped Er in InP by fluorescence EXAFS

Ofuchi, H. / Tsuchiya, J. / Matsubara, N. / Tabuchi, M. / Fujiwara, Y. / Takeda, Y.

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Document information

Title:

Atom configuration study of -doped Er in InP by fluorescence EXAFS

Contributors:

Ofuchi, H. (author) / Tsuchiya, J. (author) / Matsubara, N. (author) / Tabuchi, M. (author) / Fujiwara, Y. (author) / Takeda, Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 117/118 ; 781-784

Publication date:

1997-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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