A platform for research: civil engineering, architecture and urbanism
Composition and chemical width of ultrathin amorphous films at grain boundaries in silicon nitride
Composition and chemical width of ultrathin amorphous films at grain boundaries in silicon nitride
Composition and chemical width of ultrathin amorphous films at grain boundaries in silicon nitride
Gu, H. (author) / Cannon, R. M. (author) / Ruehle, M. (author)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 13 ; 376-387
1998-01-01
12 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Crystallization Induced Sub-Grain Boundaries in Silicon Nitride
Springer Verlag | 1997
|Amorphous SiO~2 Precipitates at Silicon Grain Boundaries
British Library Online Contents | 1996
|Electrical studies on amorphous silicon carbide nitride films
British Library Online Contents | 2002
|Chemical Composition of Silicon Nitride Thin Films Prepared by LPCVD
British Library Online Contents | 2006
|Aspects of Stability of Amorphous Grain Boundary Phase in Silicon Nitride Ceramics
British Library Online Contents | 1994
|