Characterization of GaN epitaxial layers on SiC substrates with Al~xGa~1~-~xN buffer layers: Fid-Bau Portal

Characterization of GaN epitaxial layers on SiC substrates with Al~xGa~1~-~xN buffer layers

Lin, C. F. / Cheng, H. C. / Feng, M. S. / Chi, G. C.

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Characterization of GaN epitaxial layers on SiC substrates with Al~xGa~1~-~xN buffer layers

Lin, C. F. / Cheng, H. C. / Feng, M. S. / Chi, G. C.

Characterization of GaN epitaxial layers on SiC substrates with Al~xGa~1~-~xN buffer layers

Lin, C. F. / Cheng, H. C. / Feng, M. S. / Chi, G. C.

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Check availability in my library

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Document information

Title:

Characterization of GaN epitaxial layers on SiC substrates with Al~xGa~1~-~xN buffer layers

Contributors:

Lin, C. F. (author) / Cheng, H. C. (author) / Feng, M. S. (author) / Chi, G. C. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 50 ; 25-28

Publication date:

1997-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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