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In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells
In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells
In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells
Scholz, F. (author) / Sohmer, A. (author) / Off, J. (author) / Syganow, V. (author) / Dornen, A. (author) / Im, J.-S. (author) / Hangleiter, A. (author) / Lakner, H. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 50 ; 238-244
1997-01-01
7 pages
Article (Journal)
English
DDC:
620.11
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