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In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells
In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells
In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells
Scholz, F. (Autor:in) / Sohmer, A. (Autor:in) / Off, J. (Autor:in) / Syganow, V. (Autor:in) / Dornen, A. (Autor:in) / Im, J.-S. (Autor:in) / Hangleiter, A. (Autor:in) / Lakner, H. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 50 ; 238-244
01.01.1997
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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