Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE: Fid-Bau Portal

Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE

Flannery, L. B. / Harrison, I. / Lacklison, D. E. / Dykeman, R. I. / Cheng, T. S. / Foxon, C. T.

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Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE

Flannery, L. B. / Harrison, I. / Lacklison, D. E. / Dykeman, R. I. / Cheng, T. S. / Foxon, C. T.

Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE

Flannery, L. B. / Harrison, I. / Lacklison, D. E. / Dykeman, R. I. / Cheng, T. S. / Foxon, C. T.

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Title:

Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE

Contributors:

Flannery, L. B. (author) / Harrison, I. (author) / Lacklison, D. E. (author) / Dykeman, R. I. (author) / Cheng, T. S. (author) / Foxon, C. T. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 50 ; 307-310

Publication date:

1997-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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