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    Study of the effect of the oxygen partial pressure on the properties of rf reactive magnetron sputtered tin-doped indium oxide films

    New search for: Meng, L.-J.
    New search for: Dos Santos, M. P.

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    Study of the effect of the oxygen partial pressure on the properties of rf reactive magnetron sputtered tin-doped indium oxide films

    New search for: Meng, L.-J.
    New search for: Dos Santos, M. P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Study of the effect of the oxygen partial pressure on the properties of rf reactive magnetron sputtered tin-doped indium oxide films

    New search for: Meng, L.-J.
    New search for: Dos Santos, M. P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Title:

    Study of the effect of the oxygen partial pressure on the properties of rf reactive magnetron sputtered tin-doped indium oxide films

    Contributors:

    Meng, L.-J. (author) / Dos Santos, M. P. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 120 ; 243-249

    Publication date:

    1997-01-01

    Size:

    7 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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