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Study of the effect of the oxygen partial pressure on the properties of rf reactive magnetron sputtered tin-doped indium oxide films

Meng, L.-J. / Dos Santos, M. P.

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Study of the effect of the oxygen partial pressure on the properties of rf reactive magnetron sputtered tin-doped indium oxide films

Meng, L.-J. / Dos Santos, M. P.

Study of the effect of the oxygen partial pressure on the properties of rf reactive magnetron sputtered tin-doped indium oxide films

Meng, L.-J. / Dos Santos, M. P.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

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Dokumentinformationen

Ähnliche Titel

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Titel:

Study of the effect of the oxygen partial pressure on the properties of rf reactive magnetron sputtered tin-doped indium oxide films

Beteiligte:

Meng, L.-J. (Autor:in) / Dos Santos, M. P. (Autor:in)

Erschienen in:

APPLIED SURFACE SCIENCE ; 120 ; 243-249

Erscheinungsdatum:

01.01.1997

Format / Umfang:

7 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.35

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Wu, W.-F. / Chiou, B.-S. | British Library Online Contents | 1993

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