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Theoretical Investigation of the Electrical Behavior of SiC MESFETs for Microwave Power Amplification

Schwierz, F. / Roschke, M. / Liou, J. J. / Paasch, G.

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Theoretical Investigation of the Electrical Behavior of SiC MESFETs for Microwave Power Amplification

Schwierz, F. / Roschke, M. / Liou, J. J. / Paasch, G.

Theoretical Investigation of the Electrical Behavior of SiC MESFETs for Microwave Power Amplification

Schwierz, F. / Roschke, M. / Liou, J. J. / Paasch, G.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Theoretical Investigation of the Electrical Behavior of SiC MESFETs for Microwave Power Amplification

Contributors:

Schwierz, F. (author) / Roschke, M. (author) / Liou, J. J. (author) / Paasch, G. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 973-976

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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