Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs: Fid-Bau Portal

Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs

Noblanc, O. / Arnodo, C. / Dua, C. / Chartier, E. / Brylinski, C.

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Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs

Noblanc, O. / Arnodo, C. / Dua, C. / Chartier, E. / Brylinski, C.

Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs

Noblanc, O. / Arnodo, C. / Dua, C. / Chartier, E. / Brylinski, C.

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Check availability in my library

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Document information

Title:

Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs

Contributors:

Noblanc, O. (author) / Arnodo, C. (author) / Dua, C. (author) / Chartier, E. (author) / Brylinski, C. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 339 - 344

Publication date:

1999-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Noblanc, O. / Arnodo, C. / Chartier, E. et al. | British Library Online Contents | 1998

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