High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC: Fid-Bau Portal

High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC

Spitz, J. / Melloch, M. R. / Cooper, J. A. / Capano, M. A.

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High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC

Spitz, J. / Melloch, M. R. / Cooper, J. A. / Capano, M. A.

High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC

Spitz, J. / Melloch, M. R. / Cooper, J. A. / Capano, M. A.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

Title:

High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC

Contributors:

Spitz, J. (author) / Melloch, M. R. (author) / Cooper, J. A. (author) / Capano, M. A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 1005-1008

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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