1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation: Fid-Bau Portal

1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

Hull, B.A. / Ryu, S.H. / Zhang, J. / Jonas, C. / O Loughlin, M.J. / Callanan, R. / Palmour, J.

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1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

Hull, B.A. / Ryu, S.H. / Zhang, J. / Jonas, C. / O Loughlin, M.J. / Callanan, R. / Palmour, J.

1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

Hull, B.A. / Ryu, S.H. / Zhang, J. / Jonas, C. / O Loughlin, M.J. / Callanan, R. / Palmour, J.

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Title:

1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

Contributors:

Hull, B.A. (author) / Ryu, S.H. (author) / Zhang, J. (author) / Jonas, C. (author) / O Loughlin, M.J. (author) / Callanan, R. (author) / Palmour, J. (author) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.

Published in:

Silicon Carbide and Related Materials 2010 ; 633-636

MATERIALS SCIENCE FORUM ; 679/680

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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