The Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a Gate: Fid-Bau Portal

The Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a Gate

Sankin, V. I. / Shkrebiy, P. P. / Kuznetsov, A. N. / Savkina, N. S.

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The Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a Gate

Sankin, V. I. / Shkrebiy, P. P. / Kuznetsov, A. N. / Savkina, N. S.

The Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a Gate

Sankin, V. I. / Shkrebiy, P. P. / Kuznetsov, A. N. / Savkina, N. S.

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Title:

The Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a Gate

Contributors:

Sankin, V. I. (author) / Shkrebiy, P. P. (author) / Kuznetsov, A. N. (author) / Savkina, N. S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 1407-1410

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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