Molecular Beam Epitaxy Growth and Characterisation of GaAs~1~-~xN~x Layers: Fid-Bau Portal

Molecular Beam Epitaxy Growth and Characterisation of GaAs~1~-~xN~x Layers

Thordson, J. V. / Zseboek, O. / Soedervall, U. / Andersson, T. G.

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Molecular Beam Epitaxy Growth and Characterisation of GaAs~1~-~xN~x Layers

Thordson, J. V. / Zseboek, O. / Soedervall, U. / Andersson, T. G.

Molecular Beam Epitaxy Growth and Characterisation of GaAs~1~-~xN~x Layers

Thordson, J. V. / Zseboek, O. / Soedervall, U. / Andersson, T. G.

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Check availability in my library

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Document information

Title:

Molecular Beam Epitaxy Growth and Characterisation of GaAs~1~-~xN~x Layers

Contributors:

Thordson, J. V. (author) / Zseboek, O. (author) / Soedervall, U. (author) / Andersson, T. G. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 1185-1188

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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