A platform for research: civil engineering, architecture and urbanism
Free Exciton Recombination in Tensile Strained GaN Grown on GaAs
Free Exciton Recombination in Tensile Strained GaN Grown on GaAs
Free Exciton Recombination in Tensile Strained GaN Grown on GaAs
Goldhahn, R. (author) / Shokhovets, S. (author) / Romanus, H. (author) / Cheng, T. S. (author) / Foxon, C. T. (author)
MATERIALS SCIENCE FORUM ; 264/268 ; 1271-1274
1998-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Evidence for indirect recombination in GaInNAs/GaAs strained multiple quantum wells
British Library Online Contents | 2002
|Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates
British Library Online Contents | 2014
|Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells
British Library Online Contents | 1995
|British Library Online Contents | 2003
|Bound Exciton Recombination in Electron Irradiated 4H-SiC
British Library Online Contents | 1998
|