A platform for research: civil engineering, architecture and urbanism
Defect Reactions in Low Temperature Electron Irradiated AlAs Investigated by Measurements of the Lattice Parameter
Defect Reactions in Low Temperature Electron Irradiated AlAs Investigated by Measurements of the Lattice Parameter
Defect Reactions in Low Temperature Electron Irradiated AlAs Investigated by Measurements of the Lattice Parameter
Gaber, A. (author) / Zillgen, H. (author) / Ehrhart, P. (author) / Partyka, P. (author) / Averback, R. S. (author)
MATERIALS SCIENCE FORUM ; 258/263 ; 1253-1258
1997-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 1996
|Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy
British Library Online Contents | 2003
|High-Accuracy Lattice Constant Measurements of Electron-Irradiated 6H-SiC Single Crystals
British Library Online Contents | 2003
|Observation of Metastable Defect in Electron Irradiated 6H-SiC
British Library Online Contents | 1998
|Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation
British Library Online Contents | 2003
|