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    Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering

    New search for: Harima, H.
    New search for: Hosoda, T.
    New search for: Nakashima, S.
    New search for: Pensl, G.
    New search for: Morkoc, H.
    New search for: Monemar, B.
    New search for: Janzen, E.

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    Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering

    New search for: Harima, H.
    New search for: Hosoda, T.
    New search for: Nakashima, S.
    New search for: Pensl, G.
    New search for: Morkoc, H.
    New search for: Monemar, B.
    New search for: Janzen, E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering

    New search for: Harima, H.
    New search for: Hosoda, T.
    New search for: Nakashima, S.
    New search for: Pensl, G.
    New search for: Morkoc, H.
    New search for: Monemar, B.
    New search for: Janzen, E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering

    Contributors:

    Harima, H. (author) / Hosoda, T. (author) / Nakashima, S. (author) / Pensl, G. / Morkoc, H. / Monemar, B. / Janzen, E.

    Published in:

    Silicon Carbide, III-Nitrides and Related Materials ; 449-454

    MATERIALS SCIENCE FORUM ; 264/268

    Publication date:

    1998-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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