A platform for research: civil engineering, architecture and urbanism
High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
Schmidt, J. (author) / Matsumoto, T. (author) / Poluektov, O. G. (author) / Van Duijn-Arnold, A. (author) / Ikoma, T. (author) / Baranov, P. G. (author) / Mokhov, E. N. (author) / Pensl, G. / Morkoc, H. / Monemar, B.
1998-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
High-frequency EPR studies of shallow and deep boron acceptors in 6H-SiC
British Library Online Contents | 1997
|Oxygen in silicon carbide: shallow donors and deep acceptors
British Library Online Contents | 1999
|Are There any Shallow Acceptors in GaN?
British Library Online Contents | 1998
|X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide
British Library Online Contents | 1998
|Shallow boron dopant on silicon
British Library Online Contents | 2004
|