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    A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors

    New search for: Madangarli, V. P.
    New search for: Sudarshan, T. S.
    New search for: Pensl, G.
    New search for: Morkoc, H.
    New search for: Monemar, B.
    New search for: Janzen, E.

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    A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors

    New search for: Madangarli, V. P.
    New search for: Sudarshan, T. S.
    New search for: Pensl, G.
    New search for: Morkoc, H.
    New search for: Monemar, B.
    New search for: Janzen, E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors

    New search for: Madangarli, V. P.
    New search for: Sudarshan, T. S.
    New search for: Pensl, G.
    New search for: Morkoc, H.
    New search for: Monemar, B.
    New search for: Janzen, E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
    Title:

    A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors

    Contributors:

    Madangarli, V. P. (author) / Sudarshan, T. S. (author) / Pensl, G. / Morkoc, H. / Monemar, B. / Janzen, E.

    Published in:

    Silicon Carbide, III-Nitrides and Related Materials ; 665-668

    MATERIALS SCIENCE FORUM ; 264/268

    Publication date:

    1998-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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