A platform for research: civil engineering, architecture and urbanism
Interface defects and their effect on the electrical properties of ZnSe/GaAs heterojunctions grown by MBE
Interface defects and their effect on the electrical properties of ZnSe/GaAs heterojunctions grown by MBE
Interface defects and their effect on the electrical properties of ZnSe/GaAs heterojunctions grown by MBE
Seghier, D. (author) / Hauksson, I. S. (author) / Gislason, H. P. (author) / Prior, K. A. (author) / Cavenett, B. C. (author) / Davies, G. / Nazare, M. H.
1997-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Electrical Characterization of MOVPE Grown Au/ZnSe/GaAs Heterostructures
British Library Online Contents | 1995
|British Library Online Contents | 2017
|Characterization of structural defects in MBE grown ZnSe
British Library Online Contents | 1997
|British Library Online Contents | 2017
|Comparison of the photocurrent of ZnSe/InSe/Si and ZnSe/Si heterojunctions
British Library Online Contents | 1998
|