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Bistability of Oxygen Vacancy in Silicon Dioxide

Oshiyama, A.

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Bistability of Oxygen Vacancy in Silicon Dioxide

Oshiyama, A.

Bistability of Oxygen Vacancy in Silicon Dioxide

Oshiyama, A.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Bistability of Oxygen Vacancy in Silicon Dioxide

Contributors:

Oshiyama, A. (author) / Davies, G. / Nazare, M. H.

Published in:

Defects in Semiconductors ICDS-19 ; 1479-1484

MATERIALS SCIENCE FORUM ; 258/263

Publication date:

1997-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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