Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN / Al~2O~3(0001) Studied by TEM: Fid-Bau Portal

Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN / Al~2O~3(0001) Studied by TEM

Kaiser, S. / Preis, H. / Ambacher, O. / Gebhardt, W.

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Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN / Al~2O~3(0001) Studied by TEM

Kaiser, S. / Preis, H. / Ambacher, O. / Gebhardt, W.

Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN / Al~2O~3(0001) Studied by TEM

Kaiser, S. / Preis, H. / Ambacher, O. / Gebhardt, W.

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Check availability in my library

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Title:

Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN / Al~2O~3(0001) Studied by TEM

Contributors:

Kaiser, S. (author) / Preis, H. (author) / Ambacher, O. (author) / Gebhardt, W. (author) / Davies, G. / Nazare, M. H.

Published in:

Defects in Semiconductors: ICDS 19 ; 1755-1760

MATERIALS SCIENCE FORUM ; 258/263

Publication date:

1997-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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