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    The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon

    New search for: Khirunenko, L. I.
    New search for: Pomozov, Y. V.
    New search for: Shakhovtsov, V. I.
    New search for: Shumov, V. V.
    New search for: Davies, G.
    New search for: Nazare, M. H.

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    The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon

    New search for: Khirunenko, L. I.
    New search for: Pomozov, Y. V.
    New search for: Shakhovtsov, V. I.
    New search for: Shumov, V. V.
    New search for: Davies, G.
    New search for: Nazare, M. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon

    New search for: Khirunenko, L. I.
    New search for: Pomozov, Y. V.
    New search for: Shakhovtsov, V. I.
    New search for: Shumov, V. V.
    New search for: Davies, G.
    New search for: Nazare, M. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Title:

    The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon

    Contributors:

    Khirunenko, L. I. (author) / Pomozov, Y. V. (author) / Shakhovtsov, V. I. (author) / Shumov, V. V. (author) / Davies, G. / Nazare, M. H.

    Published in:

    Defects in Semiconductors: ICDS 19 ; 1773-1776

    MATERIALS SCIENCE FORUM ; 258/263

    Publication date:

    1997-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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