Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Reducing the density of threading dislocations in GaAs epitaxial layers. Efficiency assessment of isovalent Bi doping and Pb doping

    New search for: Baganov, Y.
    New search for: Krasnov, V.
    New search for: Lebed, O.
    New search for: Shutov, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Reducing the density of threading dislocations in GaAs epitaxial layers. Efficiency assessment of isovalent Bi doping and Pb doping

    New search for: Baganov, Y.
    New search for: Krasnov, V.
    New search for: Lebed, O.
    New search for: Shutov, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Reducing the density of threading dislocations in GaAs epitaxial layers. Efficiency assessment of isovalent Bi doping and Pb doping

    New search for: Baganov, Y.
    New search for: Krasnov, V.
    New search for: Lebed, O.
    New search for: Shutov, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Reducing the density of threading dislocations in GaAs epitaxial layers. Efficiency assessment of isovalent Bi doping and Pb doping

    Contributors:

    Baganov, Y. (author) / Krasnov, V. (author) / Lebed, O. (author) / Shutov, S. (author)

    Published in:

    MATERIALS SCIENCE -WROCLAW- ; 27 ; 355-364

    Publication date:

    2009-01-01

    Size:

    10 pages

    ISSN:

    0137-1339

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers

    Simoen, E. / Brouwers, G. / Eneman, G. et al. | British Library Online Contents | 2008

    Comparative study of threading dislocations in GaN epitaxial layers by nondestructive methods

    Romanitan, Cosmin / Gavrila, Raluca / Danila, Mihai | British Library Online Contents | 2017

    Comparative study of threading dislocations in GaN epitaxial layers by nondestructive methods

    Romanitan, Cosmin / Gavrila, Raluca / Danila, Mihai | British Library Online Contents | 2017

    Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations

    Wen Jia, B. / Hua Tan, K. / Khai Loke, W. et al. | British Library Online Contents | 2015

    The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon

    Khirunenko, L. I. / Pomozov, Y. V. / Shakhovtsov, V. I. et al. | British Library Online Contents | 1997

    Back to top