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    Formation of oxygen dimers in silicon during electron-irradiation above 250 C

    New search for: Lindstroem, J. L.
    New search for: Hallberg, T.
    New search for: Aaberg, D.
    New search for: Svensson, B. G.
    New search for: Murin, L. I.
    New search for: Markevich, V. P.

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    Formation of oxygen dimers in silicon during electron-irradiation above 250 C

    New search for: Lindstroem, J. L.
    New search for: Hallberg, T.
    New search for: Aaberg, D.
    New search for: Svensson, B. G.
    New search for: Murin, L. I.
    New search for: Markevich, V. P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Formation of oxygen dimers in silicon during electron-irradiation above 250 C

    New search for: Lindstroem, J. L.
    New search for: Hallberg, T.
    New search for: Aaberg, D.
    New search for: Svensson, B. G.
    New search for: Murin, L. I.
    New search for: Markevich, V. P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Formation of oxygen dimers in silicon during electron-irradiation above 250 C

    Contributors:

    Lindstroem, J. L. (author) / Hallberg, T. (author) / Aaberg, D. (author) / Svensson, B. G. (author) / Murin, L. I. (author) / Markevich, V. P. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 258/263 ; 367-372

    Publication date:

    1997-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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