Si and C �-doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlattices: Fid-Bau Portal

Si and C -doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlattices

Jagadish, C. / Lia, G. / Johnston, M. B. / Gal, M.

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Si and C -doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlattices

Jagadish, C. / Lia, G. / Johnston, M. B. / Gal, M.

Si and C -doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlattices

Jagadish, C. / Lia, G. / Johnston, M. B. / Gal, M.

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Document information

Title:

Si and C -doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlattices

Contributors:

Jagadish, C. (author) / Lia, G. (author) / Johnston, M. B. (author) / Gal, M. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 51 ; 103-105

Publication date:

1998-01-01

Size:

3 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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