Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques: Fid-Bau Portal

Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques

Martinez, O. / Avella, M. / de la Puente, E. / Gonzalez, M. A. / Jimenez, J. / Gerard, B. / Gil-Lafon, E.

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Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques

Martinez, O. / Avella, M. / de la Puente, E. / Gonzalez, M. A. / Jimenez, J. / Gerard, B. / Gil-Lafon, E.

Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques

Martinez, O. / Avella, M. / de la Puente, E. / Gonzalez, M. A. / Jimenez, J. / Gerard, B. / Gil-Lafon, E.

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Title:

Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques

Contributors:

Martinez, O. (author) / Avella, M. (author) / de la Puente, E. (author) / Gonzalez, M. A. (author) / Jimenez, J. (author) / Gerard, B. (author) / Gil-Lafon, E. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 80 ; 197 - 201

Publication date:

2001-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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