A platform for research: civil engineering, architecture and urbanism
Mobility (10^6 cm^2 V^-^1 s^-^1) of 2DEGs, 30 nm from ex situ patterned GaAs regrowth interfaces
Mobility (10^6 cm^2 V^-^1 s^-^1) of 2DEGs, 30 nm from ex situ patterned GaAs regrowth interfaces
Mobility (10^6 cm^2 V^-^1 s^-^1) of 2DEGs, 30 nm from ex situ patterned GaAs regrowth interfaces
Burke, T. M. (author) / Ritchie, D. A. (author) / Linfield, E. H. (author) / O'Sullivan, M. P. (author) / Burroughes, J. H. (author) / Leadbeater, M. L. (author) / Holmes, S. N. (author) / Norman, C. E. (author) / Shields, A. J. (author) / Pepper, M. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 51 ; 202-206
1998-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
A hole facet wire formed by MBE regrowth over an ex-situ patterned GaAs substrate
British Library Online Contents | 1995
|MBE regrowth of GaAs/AlGaAs structures on RIE patterned substrates
British Library Online Contents | 1993
|Improved method for GaAs-(Ga,Al)As epitaxial regrowth
British Library Online Contents | 1993
|Wiley | 1969
|